Engineered heterostructures of 6.1 angstrom III-V semiconductors for advanced electronic and optoelectronic applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3790, Issue , 1999, Pages 13-22

  Shanabrook, B V ^a   Barvosa Carter, W ^a   Bass, R ^a   Bennett, B R ^a   Boos, J B ^a   Bewley, W W ^a   Bracker, A S ^a   Culbertson, J C ^a   Glaser, E R ^a   Kruppa, W ^a   Magno, R ^a   Moore, W J ^a   Meyer, J R ^a   Nosho, B Z ^a   Park, D ^a   et al , ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOYS; ELECTRONIC EQUIPMENT; ELECTRONIC EQUIPMENT MANUFACTURE; EPITAXIAL GROWTH; INFRARED DETECTORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SUPERLATTICES; TRANSISTORS;

HIGH SPEED LOGIC CIRCUITS; MID-INFRARED SEMICONDUCTOR LASERS; TERAHERTZ TRANSISTORS;

HETEROJUNCTIONS;

EID: 0033361847     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (26)