Formation and etching of thin nitride layers on GaAs using atomic nitrogen and hydrogen

Solid-State Electronics

Volumn 41, Issue 2 SPEC. ISS., 1997, Pages 345-347

  Makimoto, Toshiki ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; THIN FILMS;

HOT TUNGSTEN FILAMENT;

SEMICONDUCTING FILMS;

EID: 0031078162     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0038-1101(96)00242-0     Document Type: Article

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