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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 9 A, 1998, Pages 4726-4731

Reduction of point defects and formation of abrupt hetero-interfaces in low-temperatufre molecular beam epitaxy of GaAs and GaP under atomic hydrogen irradiation

(5) Yokozeki, Mikihiro a Yonezu, Hiroo a Tsuji, Takuto a Aizawa, Kazuya a Ohshima, Naoki a

a TOYOHASHI UNIVERSITY OF TECHNOLOGY (Japan)

Author keywords

AsGa antisite; Atomic hydrogen; Excess As; Excess P; Hetero interface; Low temperature growth; Point defect

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; HETEROJUNCTIONS; HYDROGEN; INTERFACES (MATERIALS); IRRADIATION; MOLECULAR BEAM EPITAXY; POINT DEFECTS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ANTISITE; ATOMIC HYDROGEN IRRADIATION; HETERO INTERFACES; LOW TEMPERATURE GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032154599 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.4726 Document Type: Article

Times cited : (5)

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