Molecular beam epitaxial growth and characterization of strain-compensated Al0.3In0.7P/InP/Al0.3In0.7P metamorphic-pseudomorphic high electron mobility transistors on GaAs substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1519-1523

  Hoke, W E ^a   Lemonias, P J ^a   Kennedy, T D ^a   Torabi, A ^a   Tong, E K ^a   Chang, K L ^b   Hsieh, K C ^b  

^a RAYTHEON COMPANY   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; CURRENT DENSITY; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; STRAIN RATE; SURFACE ROUGHNESS; TENSILE STRESS; TRANSMISSION ELECTRON MICROSCOPY;

ALUMINUM INDIUM PHOSPHIDE; CHANNEL SHEET DENSITY; METAMORPHIC STRUCTURE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0035535348     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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