Comparison of strained channel InGaAs high electron mobility structures grown on InP and GaAs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1163-1166

  Sandhu, R S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644452624     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590715     Document Type: Article

References (9)

1. Drouot, M. Gendry, C. Santinelli, X. Letartre, J. Tardy, P. Viktorovitch, G. Hollinger, M. Ambri, and M. Pitaval, IEEE Trans. Electron Devices 43, 1326 (1996).
2. J. Pamulapati, R. Lai, G. I. Ng, Y. C. Chen, P. R. Berger, P. K. Bhattacharya, J. Singh, and D. Pavlidis, J. Appl. Phys. 68, 347 (1990).
3. F. Peiró, J. C. Ferrer, A. Cornet, J. R. Morante, M. Beck, and M. A. Py, Mater. Sci. Eng., B 44, 325 (1997).
4. M. Beck and M. Ilegems, Proceedings of the 8th International Conference on InP and Related Materials, Schwäbisch Gmünd, Germany, 21-25 April 1996, IEEE Catalog No. 96CH35930 (unpublished), p. 97.
5. J. W. Matthews and A. E. Blakeslee, J. Cryst. Growth 27, 118 (1974).
6. M. Meshkinpour, M. S. Goorsky, G. Chu, D. C. Streit, T. Block, and M. Wojtowicz, Appl. Phys. Lett. 66, 748 (1995).
7. M. Meshkinpour, M. S. Goorsky, D. C. Streit, T. Block, M. Wojtowicz, K. Rammohan, and D. H. Rich, Mater. Res. Soc. Symp. Proc. 340, 327 (1994).
8. M. Albrecht, H. P. Strunk, R. Hull, and J. M. Bonar, Appl. Phys. Lett. 62, 2206 (1993).
9. C. Orme, Lawrence Livermore National Laboratories (private communication).