Strain and optical transitions in InAs quantum dots on (001) GaAs

Superlattices and Microstructures

Volumn 30, Issue 4, 2001, Pages 205-213

  Fu, Y ^a   Ferdos, F ^a   Sadeghi, M ^a   Zhao, Q X ^a   Wang, S M ^a   Larsson, A ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Capping layers; InAs quantum dots; Photoluminescene; Strain distribution

Indexed keywords

APPROXIMATION THEORY; ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; ELECTRON TRANSITIONS; GROUND STATE; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; STRAIN;

CONDUCTION BAND; OPTICAL TRANSITIONS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035710589     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2001.1009     Document Type: Article

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