NH3 flow rates dependence of crystallinity in GaN thin films grown by reactive close-spaced method at low temperature

Journal of Crystal Growth

Volumn 237-239, Issue 1-4 II, 2002, Pages 1042-1046

  Watanabe, Yasuyuki ^a   Sano, Masatoshi ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

A3. Hot wall epitaxy; B1. Nitrides; B2. Semiconducting III V materials; B2. Semiconvducting gallium compounds

Indexed keywords

AMMONIA; CHEMICAL REACTORS; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRON MOBILITY; EPITAXIAL GROWTH; EXCITONS; GALLIUM NITRIDE; LOW TEMPERATURE OPERATIONS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PRESSURE EFFECTS; SAPPHIRE; THIN FILMS; X RAY ANALYSIS;

RESISTANCE HEATED REACTORS;

FILM GROWTH;

EID: 0036531148     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02124-8     Document Type: Article

References (11)