Physical parameters of the quantum mechanical interference method for the determination of oxide thickness in MOS devices

Solid-State Electronics

Volumn 45, Issue 1, 2001, Pages 101-105

  Katto, H ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELLIPSOMETRY; MOS CAPACITORS; PARAMETER ESTIMATION; QUANTUM INTERFERENCE DEVICES; QUANTUM THEORY;

QUANTUM MECHANICAL INTERFERENCE METHOD;

MOSFET DEVICES;

EID: 0035148179     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00222-7     Document Type: Article

References (5)

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3. Wu E, Lo SH, Abadeer W, Acovic A, Buchanan D, Furukawa T, Brochu D, Dufresne R. Determination of ultra-thin oxide voltages and thickness and the impact on reliability projection. Int Reliab Phys Symp 97. p. 184-9.
4. Gupta A., Fang P., Song M., Lin M., Chen K., Hu C. Accurate determination of ultrathin gate oxide thickness and effective polysilicon doping of CMOS devices. IEEE Electron Dev Lett. 18(12):1997;580-582.
5. Sune J., Olivo P., Ricco B. Quantum-mechanical modeling of accumulation layers in MOS structures. IEEE Trans Electron Dev. 39(7):1992;1732-1739.