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Volumn 9, Issue 3, 2000, Pages 460-463
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Investigation of electromechanical distortions in gallium nitride by reflectance anisotropy spectroscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
ANISOTROPY;
ANNEALING;
CHEMICAL BEAM EPITAXY;
CRYSTAL SYMMETRY;
NITRIDES;
PIEZOELECTRIC MATERIALS;
SEMICONDUCTING ALUMINUM COMPOUNDS;
SEMICONDUCTING GALLIUM ARSENIDE;
SPECTROSCOPY;
STRAIN;
THIN FILMS;
GALLIUM NITRIDE;
REFLECTANCE ANISOTROPY SPECTROSCOPY;
SEMICONDUCTING FILMS;
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EID: 0033737969
PISSN: 09259635
EISSN: None
Source Type: Journal
DOI: 10.1016/S0925-9635(99)00282-4 Document Type: Article |
Times cited : (2)
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References (13)
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