Anisotropie etching of silicon in a two-component alkaline solution

Journal of Micromechanics and Microengineering

Volumn 13, Issue 2, 2003, Pages 165-169

  Vazsonyi E ^a   Vertesy Z ^a   Toth A ^a   Szlufcik, J ^b  

^a RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANISOTROPY; DISSOLUTION; DOPING (ADDITIVES); ETCHING; OXIDATION; PASSIVATION; SILICON WAFERS; SINGLE CRYSTALS;

ALKALINE SOLUTIONS;

COMPOSITE MICROMECHANICS;

EID: 0037340796     PISSN: 09601317     EISSN: None     Source Type: Journal    
DOI: 10.1088/0960-1317/13/2/301     Document Type: Article

References (12)

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