Effect of oxidized silicon surface on chemical deposition of nickel on n-type silicon wafer

Electrochimica Acta

Volumn 44, Issue 21, 1999, Pages 3743-3749

  Takano, Nao ^a   Hosoda, Naohiro ^a   Yamada, Taro ^a   Osaka, Tetsuya ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AGENTS; AUGER ELECTRON SPECTROSCOPY; NICKEL; NUCLEATION; OXIDATION; PARTICLES (PARTICULATE MATTER); POSITIVE IONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SILICON WAFERS; SURFACES;

NUCLEI FORMATION; REDUCING AGENT; SELECTIVE NICKEL DEPOSITION;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 0032691679     PISSN: 00134686     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0013-4686(99)00079-1     Document Type: Article

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