Fabrication of nickel dots using selective electroless deposition on silicon wafer

Chemistry Letters

Volumn , Issue 7, 1998, Pages 657-658

  Osaka, Tetsuya ^a   Takano, Nao ^a   Komaba, Shinichi ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0032396982     PISSN: 03667022     EISSN: None     Source Type: Journal    
DOI: 10.1246/cl.1998.657     Document Type: Article

References (10)

1. C. H. Ting and M. Paunovic, J. Electrochem. Soc., 136, 456(1989).
2. V. M. Dubin, Y. Shacham-Diamand, B. Zhao, P. K. Vasudev, and C. H. Ting, J. Electrochem. Soc., 144, 898(1997).
3. C. Y. Chou, J. Magn. Soc. Japan, 21, 1023(1997).
4. H. Iwasa, M. Yokozawa, and I. Teramoto, J. Electrochem. Soc., 115, 485(1968).
5. L. A. Nagahara, T. Ohmori, K. Hashimoto, and A. Fujishima, J. Vac. Sci. Technol., A11, 763(1993).
6. H. Morinaga, M. Suyama, and T. Ohmi, J. Electrochem. Soc., 141, 2834(1994).
7. J. S. Kim, H. Morita, J. D. Joo, and T. Ohmi, J. Electrochem. Soc., 144, 3275(1997).
8. T. Osaka and I. Koiwa, Kinzoku Hyoumen Gijutu (J. Surface Finishing Jpn.), 34, 330(1983).
9. W. Kern and D. A. Puotinen, RCA Rev., 31, 187(1970).
10. 2 as reducing agent Therefore, we use the terms 'NiP' and 'Ni' to designate the deposits produced in Bath A, and C, respectively.