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Journal of Applied Physics

Volumn 93, Issue 3, 2003, Pages 1848-1850

Facet temperature reduction by a current blocking layer at the front facets of high-power InGaAs/AlGaAs lasers

(8) Rinner, F a Rogg, J a Kelemen, M T a Mikulla, M a Weimann, G a Tomm, J W b Thamm, E b Poprawe, R c

a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF (Germany)

b MAX BORN INSTITUT (Germany)

c FRAUNHOFER INSTITUTE FOR LASER TECHNOLOGY (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; HIGH POWER LASERS; MIRRORS; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; THERMAL EFFECTS;

FACETS;

SEMICONDUCTOR LASERS;

EID: 0037323346 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1531839 Document Type: Article

Times cited : (60)

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