Carrier density dependence of the lifetime of InGaAs/AlGaAs high power lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4648, Issue , 2002, Pages 1-8

  Rinner, Franz ^a   Rogg, J ^a   Wiedmann, N ^a   Konstanzer, H ^a   Dammann, M ^a   Mikulla, M ^a   Poprawe, R ^a   Weimann, G ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

AlGaAs InGaAs; Carrier density; High power; Laser diodes; Lifetime; Semiconductor

Indexed keywords

CARRIER CONCENTRATION; DEGRADATION; LIGHT EMISSION; OPTICAL WAVEGUIDES; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CATASTROPHICAL OPTICAL MIRROR DAMAGE (COMD);

HIGH POWER LASERS;

EID: 0036029513     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.462643     Document Type: Conference Paper

References (8)

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