High power laser bars for 70 W CW (808nm)-A comparison between SQW and DQW

Proceedings of SPIE-The International Society for Optical Engineering

Volumn 4287, Issue , 2001, Pages 83-92

  Behringer, M ^a   Herrmann, G ^a   Grotsch S ^a   Teich, W ^a   Luft, J ^a   Acklin, B ^a   Korte, L ^a   Hanke, C ^a   Marchiano, M ^a  

^a OSRAM OPTO SEMICONDUCTORS GMBH   (Germany)

Author keywords

High power; InGaAlAs GaAs; Lifetime; MOVPE; Semiconductor laser

Indexed keywords

CAVITY RESONATORS; CURRENT DENSITY; HIGH POWER LASERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL WAVEGUIDES; SEMICONDUCTOR QUANTUM WELLS;

DOUBLE QUANTUM WELL STRUCTURE; INDIUM GALLIUM ALUMINUM ARSENIDE; OPTICAL CAVITY WAVEGUIDES;

SEMICONDUCTOR LASERS;

EID: 0034862608     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.429787     Document Type: Article

References (3)