메뉴 건너뛰기




Volumn 5, Issue 3, 1999, Pages 817-821

High-power and highly reliable operation of Al-free InGaAs-InGaAsP 0.98-μm lasers with a window structure fabricated by Si Ion implantation

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; HIGH POWER LASERS; INDIUM; ION IMPLANTATION; LASER WINDOWS; OPTICAL COMMUNICATION; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

EID: 0033123904     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788455     Document Type: Article
Times cited : (30)

References (24)
  • 1
    • 0027617390 scopus 로고
    • 0.98-1.02 μm strained InGaAs/GaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides
    • S. Ishikawa, K. Fukagai, H. Chida, T. Miyazaki, H. Fujii, and K. Endo, "0.98-1.02 μm strained InGaAs/GaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides," IEEE J. Quantum Electron., vol. 29, pp. 1936-1942, 1993.
    • (1993) IEEE J. Quantum Electron. , vol.29 , pp. 1936-1942
    • Ishikawa, S.1    Fukagai, K.2    Chida, H.3    Miyazaki, T.4    Fujii, H.5    Endo, K.6
  • 3
    • 0029410218 scopus 로고
    • High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation
    • L. J. Mawst, A. Bhattacharya, M. Nesnidal, J. Lopez, and D. Botez, "High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation," Appl. Phys. Lett., vol. 67, pp. 2901-2903, 1995.
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 2901-2903
    • Mawst, L.J.1    Bhattacharya, A.2    Nesnidal, M.3    Lopez, J.4    Botez, D.5
  • 4
    • 0029327821 scopus 로고
    • Influence of strain on lasing performances of Al-free strained-layer Ga(In)As(P)-GaInAsP-GaInP quantum-well lasers emitting at 0.78 < λ < 1.1 μm
    • June
    • G. Zhang, "Influence of strain on lasing performances of Al-free strained-layer Ga(In)As(P)-GaInAsP-GaInP quantum-well lasers emitting at 0.78 < λ < 1.1 μm," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 183-188, June 1995.
    • (1995) IEEE J. Select. Topics Quantum Electron. , vol.1 , pp. 183-188
    • Zhang, G.1
  • 5
    • 0025494231 scopus 로고
    • Novel window-structure AlGaInP visible-light laser diodes with nonabsorbing facets fabricated by utilizing GaInP natural superlattice disordering
    • Y. Ueno, H. Fujii, K. Kobayasshi, K. Endo, A. Gomyo, K. Hara, S. Kawata, T. Yuasa, and T. Suzuki, "Novel window-structure AlGaInP visible-light laser diodes with nonabsorbing facets fabricated by utilizing GaInP natural superlattice disordering," Jpn. J. Appl. Phys., vol. 29, pp. L1666-L1668, 1990.
    • (1990) Jpn. J. Appl. Phys. , vol.29
    • Ueno, Y.1    Fujii, H.2    Kobayasshi, K.3    Endo, K.4    Gomyo, A.5    Hara, K.6    Kawata, S.7    Yuasa, T.8    Suzuki, T.9
  • 7
    • 0023647211 scopus 로고
    • 2.4 W CW, 770 nm laser arrays with nonabsorbing mirrors
    • D. F. Welch, W. Streifer, R. L. Thoronton, and T. Paoli, "2.4 W CW, 770 nm laser arrays with nonabsorbing mirrors," Electron. Lett., vol. 23, no. 10, pp. 525-527, 1987.
    • (1987) Electron. Lett. , vol.23 , Issue.10 , pp. 525-527
    • Welch, D.F.1    Streifer, W.2    Thoronton, R.L.3    Paoli, T.4
  • 9
    • 0025471035 scopus 로고
    • GaAlAs window lasers emitting 500 mW CW in fundamental mode
    • J. Ungar, N. Bar-Chaim, M. Mazed, M. Mittelstein, S. Oh, and I. Ury, "GaAlAs window lasers emitting 500 mW CW in fundamental mode," Electron. Lett., vol. 26, no. 18, pp. 1441-1442, 1990.
    • (1990) Electron. Lett. , vol.26 , Issue.18 , pp. 1441-1442
    • Ungar, J.1    Bar-Chaim, N.2    Mazed, M.3    Mittelstein, M.4    Oh, S.5    Ury, I.6
  • 11
    • 0342713119 scopus 로고
    • Gallium-implantation-enhanced intermixing of close-surface GaAs/AlAs/AlGaAs double-barrier quantum wells
    • R. K. Kupka and Y. Chen, "Gallium-implantation-enhanced intermixing of close-surface GaAs/AlAs/AlGaAs double-barrier quantum wells," J. Appl. Phys., vol. 78, no. 4, pp. 2355-2361, 1995.
    • (1995) J. Appl. Phys. , vol.78 , Issue.4 , pp. 2355-2361
    • Kupka, R.K.1    Chen, Y.2
  • 12
    • 0038808654 scopus 로고
    • Mass and dose dependence of ion-implantation-induced intermixing of GaAs/GaAlAs quantum-well structures
    • H. Leier, A. Forchel, G. Horcher, J. Hommel, S. Bayer, H. Rothfritz, G. Weimann, and W. Schlapp, "Mass and dose dependence of ion-implantation-induced intermixing of GaAs/GaAlAs quantum-well structures," J. Appl. Phys., vol. 67, no. 4, pp. 1805-1813, 1990.
    • (1990) J. Appl. Phys. , vol.67 , Issue.4 , pp. 1805-1813
    • Leier, H.1    Forchel, A.2    Horcher, G.3    Hommel, J.4    Bayer, S.5    Rothfritz, H.6    Weimann, G.7    Schlapp, W.8
  • 13
    • 21544441815 scopus 로고
    • GaAs/AlGaAs quantum-well intermixing using shallow ion implantation and rapid thermal annealing
    • B. Elman, E. S. Koteles, P. Melman, and C. A. Armiento, "GaAs/AlGaAs quantum-well intermixing using shallow ion implantation and rapid thermal annealing," J. Appl. Phys., vol. 66, no. 5, pp. 2104-2107, 1989.
    • (1989) J. Appl. Phys. , vol.66 , Issue.5 , pp. 2104-2107
    • Elman, B.1    Koteles, E.S.2    Melman, P.3    Armiento, C.A.4
  • 15
    • 0025430973 scopus 로고
    • High-power 780 nm window diffusion stripe laser diodes fabricated by an open-tube two-step diffusion technique
    • May
    • K. Isshiki, T. Kamizato, A. Takami, A. Shima, S. Karakida, H. Matsubara, and W. Susaki, "High-power 780 nm window diffusion stripe laser diodes fabricated by an open-tube two-step diffusion technique," IEEE J. Quantum Electron., vol. 26, pp. 837-842, May 1990.
    • (1990) IEEE J. Quantum Electron. , vol.26 , pp. 837-842
    • Isshiki, K.1    Kamizato, T.2    Takami, A.3    Shima, A.4    Karakida, S.5    Matsubara, H.6    Susaki, W.7
  • 16
    • 21544480361 scopus 로고
    • Disorder of an AlAs-GaAs superlattice by impurity diffusion
    • W. D. Laidig, N. Holonyak, Jr., and M. D. Camas, "Disorder of an AlAs-GaAs superlattice by impurity diffusion," Appl. Phys. Lett., vol. 38, no. 10, pp. 776-778, 1981.
    • (1981) Appl. Phys. Lett. , vol.38 , Issue.10 , pp. 776-778
    • Laidig, W.D.1    Holonyak N., Jr.2    Camas, M.D.3
  • 17
    • 0022112547 scopus 로고
    • AlGaAs window stripe burried multiquantum well lasers
    • H. Nakashima, S. Semura, T. Ohta, and T. Kuroda, "AlGaAs window stripe burried multiquantum well lasers," Jpn. J. Appl. Phys., vol. 24, no. 8, pp. L647-L649, 1985.
    • (1985) Jpn. J. Appl. Phys. , vol.24 , Issue.8
    • Nakashima, H.1    Semura, S.2    Ohta, T.3    Kuroda, T.4
  • 18
    • 0022097861 scopus 로고
    • AlGaAs/GaAs multiquantum well lasers with buried multiquantum well optical guide
    • S. Semura, T. Ohta, T. Kuroda, and H. Nakashima, "AlGaAs/GaAs multiquantum well lasers with buried multiquantum well optical guide," Jpn. J. Appl. Phys., vol. 24, no. 7, pp. L548-L550, 1985.
    • (1985) Jpn. J. Appl. Phys. , vol.24 , Issue.7
    • Semura, S.1    Ohta, T.2    Kuroda, T.3    Nakashima, H.4
  • 20
    • 36449002624 scopus 로고
    • New encapsulant source for III-V quantum well disordering
    • E. V. K. Rao, A. Hamoudi, Ph. Krauz, M. Juhel, and H. Thibierge, "New encapsulant source for III-V quantum well disordering," Appl. Phys. Lett., vol. 66, no. 4, pp. 472-474, 1995.
    • (1995) Appl. Phys. Lett. , vol.66 , Issue.4 , pp. 472-474
    • Rao, E.V.K.1    Hamoudi, A.2    Krauz, Ph.3    Juhel, M.4    Thibierge, H.5
  • 21
    • 0026152485 scopus 로고
    • Integrated external-cavity InGaAs/InP lasers using cap-annealing disordering
    • May
    • T. Miyazawa, H. Iwamura, and M. Naganuma, "Integrated external-cavity InGaAs/InP lasers using cap-annealing disordering," IEEE Photon. Technol. Lett., vol. 3, pp. 421-423, May 1991.
    • (1991) IEEE Photon. Technol. Lett. , vol.3 , pp. 421-423
    • Miyazawa, T.1    Iwamura, H.2    Naganuma, M.3
  • 24
    • 0031109101 scopus 로고    scopus 로고
    • Highly reliable and stable-lateral-mode operation of high-power 0.98-μm InGaAs-InGaAsP lasers with an exponential-shaped flared stripe
    • Apr.
    • M. Sagawa, K. Hiramoto, T. Toyonaka, T. Kikawa, S. Fujisaki, and K. Uomi, "Highly reliable and stable-lateral-mode operation of high-power 0.98-μm InGaAs-InGaAsP lasers with an exponential-shaped flared stripe," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 666-671, Apr. 1997.
    • (1997) IEEE J. Select. Topics Quantum Electron. , vol.3 , pp. 666-671
    • Sagawa, M.1    Hiramoto, K.2    Toyonaka, T.3    Kikawa, T.4    Fujisaki, S.5    Uomi, K.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.