-
1
-
-
0027617390
-
0.98-1.02 μm strained InGaAs/GaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides
-
S. Ishikawa, K. Fukagai, H. Chida, T. Miyazaki, H. Fujii, and K. Endo, "0.98-1.02 μm strained InGaAs/GaAs/AlGaAs double quantum-well high-power lasers with GaInP buried waveguides," IEEE J. Quantum Electron., vol. 29, pp. 1936-1942, 1993.
-
(1993)
IEEE J. Quantum Electron.
, vol.29
, pp. 1936-1942
-
-
Ishikawa, S.1
Fukagai, K.2
Chida, H.3
Miyazaki, T.4
Fujii, H.5
Endo, K.6
-
2
-
-
0029325231
-
0.78-and 0.98-μm ridge-waveguide lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD
-
June
-
A. Shima, H. Kizuki, A. Takemoto, S. Karakida, M. Miyashita, Y. Nagai, T. Kamizato, K. Shigihara, A. Adachi, E. Omura, and M. Otsubo, "0.78-and 0.98-μm ridge-waveguide lasers buried with AlGaAs confinement layer selectively grown by chloride-assisted MOCVD," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 102-109, June 1995.
-
(1995)
IEEE J. Select. Topics Quantum Electron.
, vol.1
, pp. 102-109
-
-
Shima, A.1
Kizuki, H.2
Takemoto, A.3
Karakida, S.4
Miyashita, M.5
Nagai, Y.6
Kamizato, T.7
Shigihara, K.8
Adachi, A.9
Omura, E.10
Otsubo, M.11
-
3
-
-
0029410218
-
High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation
-
L. J. Mawst, A. Bhattacharya, M. Nesnidal, J. Lopez, and D. Botez, "High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation," Appl. Phys. Lett., vol. 67, pp. 2901-2903, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.67
, pp. 2901-2903
-
-
Mawst, L.J.1
Bhattacharya, A.2
Nesnidal, M.3
Lopez, J.4
Botez, D.5
-
4
-
-
0029327821
-
Influence of strain on lasing performances of Al-free strained-layer Ga(In)As(P)-GaInAsP-GaInP quantum-well lasers emitting at 0.78 < λ < 1.1 μm
-
June
-
G. Zhang, "Influence of strain on lasing performances of Al-free strained-layer Ga(In)As(P)-GaInAsP-GaInP quantum-well lasers emitting at 0.78 < λ < 1.1 μm," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 183-188, June 1995.
-
(1995)
IEEE J. Select. Topics Quantum Electron.
, vol.1
, pp. 183-188
-
-
Zhang, G.1
-
5
-
-
0025494231
-
Novel window-structure AlGaInP visible-light laser diodes with nonabsorbing facets fabricated by utilizing GaInP natural superlattice disordering
-
Y. Ueno, H. Fujii, K. Kobayasshi, K. Endo, A. Gomyo, K. Hara, S. Kawata, T. Yuasa, and T. Suzuki, "Novel window-structure AlGaInP visible-light laser diodes with nonabsorbing facets fabricated by utilizing GaInP natural superlattice disordering," Jpn. J. Appl. Phys., vol. 29, pp. L1666-L1668, 1990.
-
(1990)
Jpn. J. Appl. Phys.
, vol.29
-
-
Ueno, Y.1
Fujii, H.2
Kobayasshi, K.3
Endo, K.4
Gomyo, A.5
Hara, K.6
Kawata, S.7
Yuasa, T.8
Suzuki, T.9
-
6
-
-
0018004609
-
An AlGaAs window structure laser
-
Apr.
-
H. Yonezu, M. Ueno, T. Kamejima, and I. Hayashi, "An AlGaAs window structure laser," IEEE J. Quantum Electron., vol. QE-15, pp. 775-781, Apr. 1979.
-
(1979)
IEEE J. Quantum Electron.
, vol.QE-15
, pp. 775-781
-
-
Yonezu, H.1
Ueno, M.2
Kamejima, T.3
Hayashi, I.4
-
7
-
-
0023647211
-
2.4 W CW, 770 nm laser arrays with nonabsorbing mirrors
-
D. F. Welch, W. Streifer, R. L. Thoronton, and T. Paoli, "2.4 W CW, 770 nm laser arrays with nonabsorbing mirrors," Electron. Lett., vol. 23, no. 10, pp. 525-527, 1987.
-
(1987)
Electron. Lett.
, vol.23
, Issue.10
, pp. 525-527
-
-
Welch, D.F.1
Streifer, W.2
Thoronton, R.L.3
Paoli, T.4
-
8
-
-
0342278025
-
Highly reliable 0.98 μm laser diodes with a window structure fabricated by Si-ion implantation
-
Makuhari Messe, Japan, paper 16D2-4
-
S. Yamamura, K. Shigihara, K. Kawasaki, Y. Nagai, M. Miyashita, A. Takemoto, and H. Higuchi, "Highly reliable 0.98 μm laser diodes with a window structure fabricated by Si-ion implantation," in Proc. Third Optoelectronics and Communications Conf. '98, Makuhari Messe, Japan, 1998, paper 16D2-4.
-
(1998)
Proc. Third Optoelectronics and Communications Conf. '98
-
-
Yamamura, S.1
Shigihara, K.2
Kawasaki, K.3
Nagai, Y.4
Miyashita, M.5
Takemoto, A.6
Higuchi, H.7
-
9
-
-
0025471035
-
GaAlAs window lasers emitting 500 mW CW in fundamental mode
-
J. Ungar, N. Bar-Chaim, M. Mazed, M. Mittelstein, S. Oh, and I. Ury, "GaAlAs window lasers emitting 500 mW CW in fundamental mode," Electron. Lett., vol. 26, no. 18, pp. 1441-1442, 1990.
-
(1990)
Electron. Lett.
, vol.26
, Issue.18
, pp. 1441-1442
-
-
Ungar, J.1
Bar-Chaim, N.2
Mazed, M.3
Mittelstein, M.4
Oh, S.5
Ury, I.6
-
10
-
-
0028532506
-
High power 980 nm nonabsorbing facet lasers
-
J. E. Ungar, N. S. K. Kwong, S. W. Oh, J. S. Chen, and N. Bar Chaim, "High power 980 nm nonabsorbing facet lasers," Electron. Lett., vol. 30, no. 21, pp. 1766-1767, 1994.
-
(1994)
Electron. Lett.
, vol.30
, Issue.21
, pp. 1766-1767
-
-
Ungar, J.E.1
Kwong, N.S.K.2
Oh, S.W.3
Chen, J.S.4
Bar Chaim, N.5
-
11
-
-
0342713119
-
Gallium-implantation-enhanced intermixing of close-surface GaAs/AlAs/AlGaAs double-barrier quantum wells
-
R. K. Kupka and Y. Chen, "Gallium-implantation-enhanced intermixing of close-surface GaAs/AlAs/AlGaAs double-barrier quantum wells," J. Appl. Phys., vol. 78, no. 4, pp. 2355-2361, 1995.
-
(1995)
J. Appl. Phys.
, vol.78
, Issue.4
, pp. 2355-2361
-
-
Kupka, R.K.1
Chen, Y.2
-
12
-
-
0038808654
-
Mass and dose dependence of ion-implantation-induced intermixing of GaAs/GaAlAs quantum-well structures
-
H. Leier, A. Forchel, G. Horcher, J. Hommel, S. Bayer, H. Rothfritz, G. Weimann, and W. Schlapp, "Mass and dose dependence of ion-implantation-induced intermixing of GaAs/GaAlAs quantum-well structures," J. Appl. Phys., vol. 67, no. 4, pp. 1805-1813, 1990.
-
(1990)
J. Appl. Phys.
, vol.67
, Issue.4
, pp. 1805-1813
-
-
Leier, H.1
Forchel, A.2
Horcher, G.3
Hommel, J.4
Bayer, S.5
Rothfritz, H.6
Weimann, G.7
Schlapp, W.8
-
13
-
-
21544441815
-
GaAs/AlGaAs quantum-well intermixing using shallow ion implantation and rapid thermal annealing
-
B. Elman, E. S. Koteles, P. Melman, and C. A. Armiento, "GaAs/AlGaAs quantum-well intermixing using shallow ion implantation and rapid thermal annealing," J. Appl. Phys., vol. 66, no. 5, pp. 2104-2107, 1989.
-
(1989)
J. Appl. Phys.
, vol.66
, Issue.5
, pp. 2104-2107
-
-
Elman, B.1
Koteles, E.S.2
Melman, P.3
Armiento, C.A.4
-
14
-
-
36549092781
-
Phosphorus ion implantation induced intermixing of InGaAs-InP quantum well structures
-
B. Tell, J. Shah, P. M. Thomas, K. F. Brown-Goebeler, A. DiGiovanni, B. I. Miller, and U. Koren, "Phosphorus ion implantation induced intermixing of InGaAs-InP quantum well structures," Appl. Phys. Lett., vol. 54, no. 16, pp. 1570-1572, 1989.
-
(1989)
Appl. Phys. Lett.
, vol.54
, Issue.16
, pp. 1570-1572
-
-
Tell, B.1
Shah, J.2
Thomas, P.M.3
Brown-Goebeler, K.F.4
Digiovanni, A.5
Miller, B.I.6
Koren, U.7
-
15
-
-
0025430973
-
High-power 780 nm window diffusion stripe laser diodes fabricated by an open-tube two-step diffusion technique
-
May
-
K. Isshiki, T. Kamizato, A. Takami, A. Shima, S. Karakida, H. Matsubara, and W. Susaki, "High-power 780 nm window diffusion stripe laser diodes fabricated by an open-tube two-step diffusion technique," IEEE J. Quantum Electron., vol. 26, pp. 837-842, May 1990.
-
(1990)
IEEE J. Quantum Electron.
, vol.26
, pp. 837-842
-
-
Isshiki, K.1
Kamizato, T.2
Takami, A.3
Shima, A.4
Karakida, S.5
Matsubara, H.6
Susaki, W.7
-
16
-
-
21544480361
-
Disorder of an AlAs-GaAs superlattice by impurity diffusion
-
W. D. Laidig, N. Holonyak, Jr., and M. D. Camas, "Disorder of an AlAs-GaAs superlattice by impurity diffusion," Appl. Phys. Lett., vol. 38, no. 10, pp. 776-778, 1981.
-
(1981)
Appl. Phys. Lett.
, vol.38
, Issue.10
, pp. 776-778
-
-
Laidig, W.D.1
Holonyak N., Jr.2
Camas, M.D.3
-
17
-
-
0022112547
-
AlGaAs window stripe burried multiquantum well lasers
-
H. Nakashima, S. Semura, T. Ohta, and T. Kuroda, "AlGaAs window stripe burried multiquantum well lasers," Jpn. J. Appl. Phys., vol. 24, no. 8, pp. L647-L649, 1985.
-
(1985)
Jpn. J. Appl. Phys.
, vol.24
, Issue.8
-
-
Nakashima, H.1
Semura, S.2
Ohta, T.3
Kuroda, T.4
-
18
-
-
0022097861
-
AlGaAs/GaAs multiquantum well lasers with buried multiquantum well optical guide
-
S. Semura, T. Ohta, T. Kuroda, and H. Nakashima, "AlGaAs/GaAs multiquantum well lasers with buried multiquantum well optical guide," Jpn. J. Appl. Phys., vol. 24, no. 7, pp. L548-L550, 1985.
-
(1985)
Jpn. J. Appl. Phys.
, vol.24
, Issue.7
-
-
Semura, S.1
Ohta, T.2
Kuroda, T.3
Nakashima, H.4
-
19
-
-
0343583202
-
2 capping-induced intermixing
-
2 capping-induced intermixing," Appl. Phys. Lett., vol. 69, no. 1, pp. 61-63, 1996.
-
(1996)
Appl. Phys. Lett.
, vol.69
, Issue.1
, pp. 61-63
-
-
Pepin, A.1
Vieu, C.2
Schneider, M.3
Planel, R.4
Bloch, J.5
Ben Assayag, G.6
Launois, H.7
Marzin, J.Y.8
Nissim, Y.9
-
20
-
-
36449002624
-
New encapsulant source for III-V quantum well disordering
-
E. V. K. Rao, A. Hamoudi, Ph. Krauz, M. Juhel, and H. Thibierge, "New encapsulant source for III-V quantum well disordering," Appl. Phys. Lett., vol. 66, no. 4, pp. 472-474, 1995.
-
(1995)
Appl. Phys. Lett.
, vol.66
, Issue.4
, pp. 472-474
-
-
Rao, E.V.K.1
Hamoudi, A.2
Krauz, Ph.3
Juhel, M.4
Thibierge, H.5
-
21
-
-
0026152485
-
Integrated external-cavity InGaAs/InP lasers using cap-annealing disordering
-
May
-
T. Miyazawa, H. Iwamura, and M. Naganuma, "Integrated external-cavity InGaAs/InP lasers using cap-annealing disordering," IEEE Photon. Technol. Lett., vol. 3, pp. 421-423, May 1991.
-
(1991)
IEEE Photon. Technol. Lett.
, vol.3
, pp. 421-423
-
-
Miyazawa, T.1
Iwamura, H.2
Naganuma, M.3
-
22
-
-
0026171491
-
High-power 0.8 μm InGaAsP-GaAs SCH SQW lasers
-
June
-
D. Z. Garbuzov, N. Yu. Antonishkis, A. D. Bondarev, A. B. Gulakov, S. N. Zhigulin, N. I. Katsavets, A. V. Kochergin, and E. V. Rafailov, "High-power 0.8 μm InGaAsP-GaAs SCH SQW lasers," IEEE J. Quantum Electron., vol. 27, pp. 1531-1536, June 1991.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, pp. 1531-1536
-
-
Garbuzov, D.Z.1
Yu Antonishkis, N.2
Bondarev, A.D.3
Gulakov, A.B.4
Zhigulin, S.N.5
Katsavets, N.I.6
Kochergin, A.V.7
Rafailov, E.V.8
-
23
-
-
0027612152
-
Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 μm
-
June
-
S. L. Yellen, A. H. Shepard, R. J. Dalby, J. A. Baumann, H. B. Serreze, T. S. Guido, R. Soltz, K. J. Bystrom, C. M. Harding, and R. G. Waters, "Reliability of GaAs-based semiconductor diode lasers: 0.6-1.1 μm," IEEE J. Quantum Electron., vol. 29, pp. 2058-2067, June 1993.
-
(1993)
IEEE J. Quantum Electron.
, vol.29
, pp. 2058-2067
-
-
Yellen, S.L.1
Shepard, A.H.2
Dalby, R.J.3
Baumann, J.A.4
Serreze, H.B.5
Guido, T.S.6
Soltz, R.7
Bystrom, K.J.8
Harding, C.M.9
Waters, R.G.10
-
24
-
-
0031109101
-
Highly reliable and stable-lateral-mode operation of high-power 0.98-μm InGaAs-InGaAsP lasers with an exponential-shaped flared stripe
-
Apr.
-
M. Sagawa, K. Hiramoto, T. Toyonaka, T. Kikawa, S. Fujisaki, and K. Uomi, "Highly reliable and stable-lateral-mode operation of high-power 0.98-μm InGaAs-InGaAsP lasers with an exponential-shaped flared stripe," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 666-671, Apr. 1997.
-
(1997)
IEEE J. Select. Topics Quantum Electron.
, vol.3
, pp. 666-671
-
-
Sagawa, M.1
Hiramoto, K.2
Toyonaka, T.3
Kikawa, T.4
Fujisaki, S.5
Uomi, K.6
|