High-power and highly reliable operation of Al-free InGaAs-InGaAsP 0.98-μm lasers with a window structure fabricated by Si Ion implantation

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 5, Issue 3, 1999, Pages 817-821

  Hiramoto, Kiyohisa ^a,b   Sagawa, Misuzu ^a   Kikawa, Takeshi ^a   Tsuji, Shinji ^a  

^a HITACHI LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM; HIGH POWER LASERS; INDIUM; ION IMPLANTATION; LASER WINDOWS; OPTICAL COMMUNICATION; PHOTOCURRENTS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

IMPLANTATION ENERGY; OPTICAL FIBER AMPLIFIERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE PHOSPHIDE; THRESHOLD CURRENT; WINDOW STRUCTURE;

QUANTUM WELL LASERS;

EID: 0033123904     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.788455     Document Type: Article

References (24)

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