Reduced 980 nm laser facet absorption by band gap shifted extended cavities

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 4, 1998, Pages 1790-1793

  Piva, P G ^a   Goldberg, R D ^a   Mitchell, I V ^a   Fafard, S ^b   Dion, M ^b   Buchanan, M ^b   Charbonneau, S ^a,b   Hillier, G ^c   Miner, C ^c  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^c NORTEL NETWORKS   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0013277644     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590230     Document Type: Article

References (16)

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16. This is in contrast to an energy dependence study performed on InGaAs/ GaAs/AlGaAs 980 nm laser structures presented in Ref. 9 which indicated that for this system, ion implantation through the QW was necessary to initiate any sizable PL emission blue-shift. The relatively lesser differences apparent in Fig. 3 will be addressed in a subsequent publication.