Growth-induced structural defects in SiC PVT boules

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 385-390

  Skowronski, M ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

Bulk crystal growth; Dislocations; Extended defects; Grain boundaries; Plastic deformation; Slip; Stacking faults

Indexed keywords

CRYSTAL GROWTH; DEFECTS; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; NUCLEATION; PHYSICAL VAPOR DEPOSITION; SILICON CARBIDE; EDGE DISLOCATIONS; PLASTIC DEFORMATION; SCREW DISLOCATIONS; STACKING FAULTS;

BULK CRYSTAL GROWTH; EDGE DISLOCATION; EXTENDED DEFECTS; PVT; SLIP; BASAL PLANE DISLOCATIONS; EXTENDED DEFECT; LOW ANGLE GRAIN BOUNDARIES; PHYSICAL VAPOR TRANSPORT; SILICON CARBIDE CRYSTALS; THREADING EDGE DISLOCATION;

SINGLE CRYSTALS; GRAIN BOUNDARIES;

EID: 4243530326     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.385     Document Type: Article

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