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Volumn 389-393, Issue , 2002, Pages 435-438
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Structure of 2D-nucieation-lnduced stacking faults in 6H-SiC
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Author keywords
2 D Nucleation; PVT; Stacking faults; TEM
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Indexed keywords
NUCLEATION;
SILICON CARBIDE;
STACKING FAULTS;
TRANSMISSION ELECTRON MICROSCOPY;
2-D NUCLEATIONS;
DAMAGE-FREE;
GROWTH CONDITIONS;
HIGH GROWTH TEMPERATURES;
INTERFACE REGIONS;
MULTIPLE-GROUP;
STACKING SEQUENCE;
TWO-DIMENSIONAL NUCLEATION;
HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
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EID: 4243671065
PISSN: 02555476
EISSN: 16629752
Source Type: Book Series
DOI: 10.4028hnnwscientific.net/MSF.389-393.435 Document Type: Conference Paper |
Times cited : (4)
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References (5)
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