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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 8, 2001, Pages 5079-5084

Effects of annealing on tantalum pentoxide films in N2 and N2O gas environments

(4) Houng, Mau Phon a Wang, Yeong Her a Horng, Jui Hong b Huang, Rui Chang a

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL TAIWAN OCEAN UNIVERSITY (Taiwan)

Author keywords

Annealing; Hysteresis; Stoichiometric; Tantalum pentoxide; Vacancies

Indexed keywords

ANNEALING; CAPACITANCE; CURRENT DENSITY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GASES; HYSTERESIS; LEAKAGE CURRENTS; NITROGEN OXIDES; PERMITTIVITY; STOICHIOMETRY; TANTALUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL DEFECTS;

THIN FILMS;

EID: 0035414717 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.5079 Document Type: Article

Times cited : (5)

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