GaInNAs microspheres for wavelength division multiplexing

IEE Proceedings: Optoelectronics

Volumn 150, Issue 1, 2003, Pages 89-91

  Bilici, T ^a,b   Isci, S ^a,b   Kurt, A ^a   Serpenguzel A ^a  

^a KOÇ UNIVERSITY   (Turkey)

^b BOGAZICI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CAVITY RESONATORS; INTERFEROMETERS; OPTICAL COMMUNICATION; OPTICAL FILTERS; PACKET SWITCHING; PHOTODETECTORS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR LASERS; TELECOMMUNICATION TRAFFIC; TEMPERATURE; WAVELENGTH DIVISION MULTIPLEXING;

CHANNEL DROPPING FILTERS; ELASTIC SCATTERING SPECTRA; ELECTRON CONFINEMENT; GALLIUM INDIUM NITROGEN ARSENIDE; OPTICAL RANDOM ACCESS MEMORY; PLANAR LIGHTWAVE CIRCUITS;

OPTOELECTRONIC DEVICES;

EID: 0037304483     PISSN: 13502433     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-opt:20030046     Document Type: Article

References (20)

1. Kondow, M., Uomi, K., Niwa, A., Kitatani, T., Watahiki, S., and Yazwa, Y.: 'GaInAsN: a novel material for long wavelength laser diodes with excellent high temperature performance', Jpn. J. Appl. Phys. 1, Regul. Pap. Short Notes, 1996, 35, pp. 1273-1275
2. Sik, J., Schubert, M., Leibiger, G., Gottschalch, V., and Wagner, G.: 'Band-gap energies, free carrier effects, and phonon modes in strained GaNAs/GaAs and GaNAs/InAs/GaAs superlattice heterostructures measured by spectroscopic ellipsometry', J. Appl. Phys., 2001, 89 (1), pp. 294-305
3. Tomic, S., and Reilly, E.P.: 'Gain characteristic of ideal dilute nitride quantum well lasers', Physica E, 2002, 13, pp. 1102-1105
4. Xin, H.P., Tu, C.W., and Geva, M.: 'Annealing behaviour of p-type GaInAsN grown by GSMBE', Appl. Phys. Lett., 1999, 75, pp. 1416-1418
5. Buyanova, I.A., Chen, W.M., and Monemar, B.: 'Electronic properties of Ga(In)NAs alloys', MRS Internet J. Nitride Semicond. Res., 2001, 6, paper 2
6. Pan, Z., Li, L., Zhang, W., Wang, X., Lin, Y., and Wu, R.: 'Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy', J. Cryst. Growth, 2001, 227-228, pp. 516-520
7. Heroux, J.B., Yang, X., and Wang, W.I.: 'GaInAsN resonant cavity enhanced photodetector operating at 1.3 μm', Appl. Phys. Lett., 1999, 75, pp. 2716-2718
8. Kurtz, S.R., Allerman, A.A., Jones, E.D., Gee, J.M., Banas, J.J., and Hammons, B.E.: 'InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAs', Appl. Phys. Lett., 1999, 74, pp. 729-731
9. Griffel, G., Arnold, S., Taskent, D., Serpengüzel, A., Connolly, J., and Morris, N.: 'Morphology dependent resonances of a microsphere-optical fiber system', Opt. Lett., 1996, 21, pp. 695-697
10. Sato, S., and Satoh, S.: 'Metalorganic chemical vapor deposition of GaInNAs lattice matched to GaAS for long-wavelength laser diodes', J. Cryst. Growth, 1998, 192, pp. 381-385
11. Arnold, S.: 'Microspheres, photonic atoms and the physics of nothing', Am. Sci., 2001, 89, pp. 414-421
12. Conwell, P.R., Barber, P.W., and Rushforth, C.K.: 'Resonant spectra of dielectric spheres', J. Opt. Soc. Am. A, Opt. Image Sci., 1984, 1, (1), pp. 62-66
13. Serpengüzel, A., Arnold, S., and Griffel, G.: 'Excitation of resonances of microspheres on an optical fiber', Opt. Lett., 1995, 20, (7), pp. 654-656
14. Kuwata-Gonokami, M., and Takeda, K.: 'Polymer whispering gallery mode lasers', Opt. Mater., 1998. 9, pp. 12-17
15. Benner, R.E., Barber, P.W., Owen, J.F., and Chang, R.K.: 'Observation of structure resonances in the fluorescence spectra from microspheres', Phys. Rev. Lett., 1980, 44 (7), pp. 475-478
16. 1-x quantum dots in a glass spherical microcavity', Chin. Phys. Lett., 2001, 18, (10), pp. 1350-1352
17. Serpengüzel, A., Arnold, S., Griffel, G., and Lock, J.A.: 'Enhanced coupling to microsphere resonances with optical fibers', J. Opt. Soc. Am. B, Opt. Phys., 1997, 14, (4), pp. 790-795
18. Lock, A., and Gouesbet, J.G.: 'Rigorous justification of the localized approximation to the beam-shape coefficients in a generalized Lorenz-Mie theory. I. On-axis beams', J. Opt. Soc. Am. A, Opt. Image Sci. Vis., 1994, 11, pp. 2503-2515
19. Li, N.Y., Hains, C.P., Yang, K., Lu, J., Cheng, J., and Li, P.W.: 'Organometallic vapor phase epitaxy grown and optical characteristic of almost 1.2 μm GaInNAs three-quantum-well laser diodes', Appl. Phys. Lett., 1999, 75, (8), pp. 1051-1053
20. Shimizu, H., Kumada, K., Uchiyama, S., and Kasukawa, A.: 'High-performance CW 1.26 μm GaInNAsSb-SOW ridge lasers', IEEE J. Sel. Top. Quantum Electron., 2001, 7, (2), pp. 355-364