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Surface and Interface Analysis

Volumn 35, Issue 2, 2003, Pages 136-140

Determining the amount of Si-Si bonding in CVD oxynitrides

(6) Tompkins, Harland G a Smith, Steven a Convey, Diana a Gregory, R B a Kottke, M L a Collins, David a,b

a MOTOROLA INC (United States)

b Dominion Semiconductor (United States)

Author keywords

FTIR; Raman spectroscopy; Silicon oxynitride; Spectroscopic ellipsometry

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN BONDS; RAMAN SPECTROSCOPY;

EXTINCTION COEFFICIENT;

SILICON NITRIDE;

EID: 0037294632 PISSN: 01422421 EISSN: None Source Type: Journal
DOI: 10.1002/sia.1474 Document Type: Article

Times cited : (9)

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