SCOPUS 정보 검색 플랫폼

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 528-532

Defect structure in nitrogen-rich amorphous silicon nitride films

(3) Yan, Baojie b Dias Da Silva, J H a,b Taylor, P C b

a SÃO PAULO STATE UNIVERSITY UNESP (Brazil)

b UNIVERSITY OF UTAH (United States)

Author keywords

a SiNx:H films; K center; N02 center

Indexed keywords

ANNEALING; CHEMICAL BONDS; CRYSTAL DEFECTS; ELECTRON SPIN RESONANCE SPECTROSCOPY; HIGH TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; SILICON NITRIDE; ULTRAVIOLET RADIATION;

PHOTOLUMINESCENCE MEASUREMENT;

AMORPHOUS FILMS;

EID: 0032066501 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-3093(98)00091-X Document Type: Article

Times cited : (7)

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