Existence of surface region with high dangling bond density during a-Si:H film growth

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 83-87

  Yamasaki, S ^a,b   Umeda, T ^a   Isoya, J ^a   Tanaka, K ^a  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

a Si:H; Dangling bond; Surface region

Indexed keywords

AMORPHOUS FILMS; CHEMICAL BONDS; ELECTRON SPIN RESONANCE SPECTROSCOPY; FILM GROWTH; HYDROGENATION; PLASMA APPLICATIONS; SILANES;

DANGLING BOND DENSITY; HYDROGEN PLASMA TECHNIQUE;

AMORPHOUS SILICON;

EID: 0032065194     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00024-6     Document Type: Article

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