Origin of charged dangling bonds in nitrogen-doped hydrogenated amorphous silicon

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 1, 1996, Pages 395-398

  Masuda, Atsushi ^a,b   Itoh, Ken Ichi ^a,c   Kumeda, Minoru ^a   Shimizu, Tatsuo ^a  

^a KANAZAWA UNIVERSITY   (Japan)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^c Television Kanazawa Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LEVELS; ELECTRON SPIN RESONANCE SPECTROSCOPY; PHOTOCONDUCTIVITY;

DANGLING BONDS; DARK CONDUCTIVITY; PROBING LIGHT;

AMORPHOUS SILICON;

EID: 0030563513     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(95)00741-5     Document Type: Article

References (10)

1. T. Shimizu, H. Kidoh, A. Morimoto and M. Kumeda, Jpn. J. Appl. Phys. 28 (1989) 586.
2. A. Morimoto, M. Matsumoto, M. Yoshita, M. Kumeda and T. Shimizu, Appl. Phys. Lett. 59 (1991) 2130.
3. J.-H. Zhou, K. Yamaguchi, Y. Yamamoto and T. Shimizu, J. Appl. Phys. 74 (1993) 5086.
4. J. Kanicki, W.L. Warren, C.H. Seager, M.S. Crowder and P.M. Lenahan, J. Non-Cryst. Solids 137&138 (1991) 291.
5. A. Masuda, K. Itoh, J.-H. Zhou, M. Kumeda and T. Shimizu, Jpn. J. Appl. Phys. 33 (1994) L1295.
6. M. Kumeda, M. Yoshita, A. Morimoto and T. Shimizu, Jpn. J. Appl. Phys. 29 (1990) L1578.
7. H.M. Branz and M. Silver, Phys. Rev. B42 (1990) 7420.
8. Y. Nakayama, P. Stradins and H. Fritzsche, J. Non-Cryst. Solids 164-166 (1993) 1061.
9. H. Fritzsche and Y. Nakayama, Philos. Mag. B69 (1994) 359.
10. S. Lannin, in: Semiconductors and Semimetals, Vol. 21, Part B, ed. J.I. Pankove (Academic Press, New York, 1984) ch. 6, p. 159.