II-VI quantum dots grown by MOVPE

Journal of Crystal Growth

Volumn 248, Issue , 2003, Pages 301-309

  Suemune, I ^a   Yoshida, K ^a   Kumano, H ^a   Tawara, T ^a   Ueta, A ^a   Tanaka, S ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nanomaterials; B1. Sulfides; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

NANOSTRUCTURED MATERIALS; PHONONS; PHOTONS; RELAXATION PROCESSES; SEMICONDUCTOR QUANTUM DOTS;

ENERGY RELAXATION PROCESSES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0037292444     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01862-6     Document Type: Article

References (38)

1. Warburton R.J., Duerr C.S., Karrai K., Kotthaus J.P., Medeiros-Ribeiro G., Petroff P.M. Phys. Rev. Lett. 79:1997;5282.
2. Hu Y.Z., Koch S.W., Lindberg M., Peyghambarian N., Pollock E.L., Abraham F.F. Phys. Rev. Lett. 64:1990;1805.
3. Polimeni A., Patane A., Henini M., Eaves L., Main P.C. Phys. Rev. B. 59:1999;5064.
4. Heller W., Bockelmann U. Phys. Rev. B. 55:1997;R4871.
5. Park G., Shchekin O.B., Csutak S., Huffaker D.L., Deppe D.G. Appl. Phys. Lett. 75:1999;3267.
6. Santori C., Pelton M., Solomon G., Dale Y., Yamamoto Y. Phys. Rev. Lett. 86:2001;1502.
7. Klude M., Alexe G., Kruse C., Passow T., Heinke H., Hommel D. Phys. Status Solidi B. 229:2002;935.
8. Gerard J.M., Gayral B. Physica E. 9:2001;131.
9. Xin S.H., Wang P.D., Yin A., Kim C., Dobrowolska M., Merz J.L., Furdyna J.K. Appl. Phys. Lett. 69:1996;3884.
10. Suemune I., Tawara T., Saitoh T., Uesugi K. Appl. Phys. Lett. 71:1997;3886.
11. Kurtz E., Hanada T., Zhu Z., Jung H.D., Sekiguchi T., Yao T. J. Crystal Growth. 184/185:1998;242.
12. Ma Z.H., Sun W.D., Sou I.K., Wong G.K.L. Appl. Phys. Lett. 73:1998;1340.
13. Amar J.G., Family F. Phys. Rev. Lett. 74:1995;2066.
14. Smathers J.B., Kneedler E., Bennett B.R., Jonker B.T. Appl. Phys. Lett. 72:1998;1238.
15. Zhang X.B., Hark S.K. Appl. Phys. Lett. 74:1999;3857.
16. Kratzert P.R., Rabe M., Henneberger F. Appl. Surf. Sci. 166:2000;332.
17. Medeiros-Ribeiro G., Leonard D., Petroff P.M. Appl. Phys. Lett. 66:1995;1767.
18. Tawara T., Suemune I., Tanaka S. J. Crystal Growth. 214/215:2000;1019.
19. Ebiko Y., Muto S., Suzuki D., Itoh S., Shiramine K., Haga T., Nakata Y., Yokoyama N. Phys. Rev. Lett. 80:1998;2650.
20. Arita M., Avramescu A., Uesugi K., Suemune I., Numai T., Machida H., Shimoyama N. Jpn. J. Appl. Phys. 36:1997;4097.
21. Ueta A., Avramescu A., Uesugi K., Suemune I., Machida H., Shimoyama N. Jpn. J. Appl. Phys. 37:1998;L272.
22. Ueta A., Avramescu A., Shimozawa T., Suemune I. J. Crystal Growth. 221:2000;425.
23. Avramescu A., Ueta A., Uesugi K., Suemune I. J. Crystal Growth. 214/215:2000;125.
24. Avramescu A., Ueta A., Uesugi K., Suemune I. Appl. Phys. Lett. 72:1998;716.
25. Avramescu A., Ueta A., Uesugi K., Suemune I. J. Appl. Phys. 88:2000;3158.
26. Ueta A., Avramescu A., Suemune I., Machida H., Shimoyama N. J. Crystal Growth. 209:2000;518.
27. Kalt H., Umlauff M., Hoffmann J., Langbein W., Hvam J.M., Scholl M., Sollner J., Heuken M., Jobst B., Hommel D. J. Crystal Growth. 184/185:1998;795.
28. Lowisch M., Rabe M., Kreller F., Henneberger F. Appl. Phys. Lett. 74:1999;2489.
29. Tawara T., Yoshida H., Yogo T., Tanaka S., Suemune I. J. Crystal Growth. 221:2000;699.
30. Suemune I., Tawara T., Kumano H., Yoshida H. Phys. Status Solidi B. 229:2002;961.
31. Suemune I., Ueta A., Avramescu A., Tanaka S., Kumano H., Uesugi K. Appl. Phys. Lett. 74:1999;1963.
32. Ueta A., Kumano H., Shimozawa T., Suemune I. Phys. Status Solidi B. 229:2002;971.
33. Fujita Sz., Fujita Sg. J. Crystal Growth. 184/185:1998;398.
34. Yamamoto T., Katayama-Yoshida H. Jpn. J. Appl. Phys. 37:1998;L910.
35. Katayama-Yoshida H., Sasaki T., Oguchi T. J. Crystal Growth. 117:1992;625.
36. Suemune I., Ohsawa H., Tawara T., Machida H., Shimoyama N. J. Crystal Growth. 214/215:2000;562.
37. Suemune I., Hirose J., Ueta A. Appl. Phys. Lett. 76:2000;1701.
38. Hirose J., Uesugi K., Hoshiyama M., Numai T., Suemune I., Machida H., Shimoyama N. J. Appl. Phys. 84:1998;6100.