Cross-sectional STM/STS - a useful tool for identification of dopants in silicon

Solid-State Electronics

Volumn 44, Issue 5, 2000, Pages 875-880

  Nuffer, R ^a   Mussig H J ^a   Dabrowski, J ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR DOPING;

SCANNING TUNNELING SPECTROSCOPY (STS);

MOSFET DEVICES;

EID: 0342757872     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00285-3     Document Type: Article

References (17)

1. Dabrowski J, Müssig H-J, Duane M, Dunham ST, Goossens R, Vuong H-H. Advances in Solid State Physics, 1999;38:565-82.
2. Diebold A.C., Kump M., Kopanski J.J., Seiler D.G. The Electrochem Soc. Proc. 94-33:1994;78-97.
3. Kopanski J.J., Marchiando J.F., Lowney J.R. Semiconductor characterization - present status and future needs. 1996;308 American Institute of Physics.
4. Rau W.-D., Schwander P., Baumann F.H., Höppner W., Ourmazd A. Phys. Rev. Lett. 82:(12):1999;2614-2617.
5. Yu E.T. Mat. & Sci. Engin. R17:1996;147.
6. Chao K.-J., Smith A.R., McDonald A.J., Kwong D.-L., Streetman B.G., Shih C.-K. J. Vac. Sci. Technol. B16:(1):1998;453-456.
7. Johnson, Halbout. J. Vac. Sci. Technol. 35:1996;3724.
8. Lüth H. Surfaces and interfaces of solids. 1993;Springer-Verlag, Berlin, Heidelberg.
9. Kern W., Puotinen D.A. RCA Review. 70:1970;187-206.
10. Tao M, Dai ZX, Hersman MC, Lyding JW. Step orientations and SI(111)2×1 by cross-sectional scanning tunneling microscopy. J Vac Sci Technol (in press).
11. Schade K. Halbleitertechnologie. 1:1981;VEB Verlag Technik, Berlin.
12. Lyo I.-W., Kaxiras E., Avouris Ph. Phys. Rev. Lett. 63:(12):1989;1261-1264.
13. Bedrossian P., Meade R.D., Mortensson K., Chen D.M., Golovchenko J.A., Vanderbilt D. Phys. Rev. Lett. 63:(12):1989;1257-1260.
14. Korobtsov V.V., Lifshits V.G., Zotov A.V. Surface Science. 195:1988;466-474.
15. Wong T.M.H., McKinnon A.W., Welland M.E. Surface Science. 328:1995;227-236.
16. Boland J.J. Surface Science. 244:1991;1-14.
17. Feenstra R.M., Lutz M.A. J. Vac. Sci. Technol. B9:(2):1991;716-720.