Single-electron transistors based on A1/A1CVA1 and Nb/AlOx/Nb tunnel junctions

IEEE Transactions on Applied Superconductivity

Volumn 7, Issue 2 PART 3, 1997, Pages 3099-3102

  Blüthner, Klaus ^a   Götz, Martin ^b   Hädicke, Andreas ^a   Krech, Wolfram ^b   Wagner, Thomas ^a   Mühlig, Holger ^b   Fuchs, Hans Jörg ^a   Hübner, Uwe ^b   Schelle, Detlef ^a   Kley, Ernst Bernhard ^b  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^b LEIBNIZ INSTITUTE OF PHOTONIC TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CANAL GATES; ELECTRON BEAM LITHOGRAPHY; NIOBIUM COMPOUNDS; SUPERCONDUCTING FILMS;

COULOMB BLOCKADE; GATE MODULATION;

TUNNEL JUNCTIONS;

EID: 0031169028     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/77.621988     Document Type: Article

References (11)

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