Lateral composition modulation in InAs/GaSb superlattices

Journal of Applied Physics

Volumn 93, Issue 1, 2003, Pages 311-315

  Stokes, D W ^a   Forrest, R L ^a,d   Li, J H ^a   Moss, S C ^a   Nosho, B Z ^b,e   Bennett, B R ^b   Whitman, L J ^b   Goldenberg, M ^c  

^a University of Houston   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c SFA INC   (United States)

^d UNIVERSITY OF HOUSTON DOWNTOWN   (United States)

^e Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; PHASE SEPARATION; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SUPERCONDUCTING FILMS; X RAY DIFFRACTION ANALYSIS;

LATERAL COMPOSITION MODULATION (LCM);

SEMICONDUCTOR SUPERLATTICES;

EID: 0037252514     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1529291     Document Type: Article

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