Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 1027-1033

  Goldman, R S ^a,b   Feenstra, R M ^a   Silfvenius, C ^c   Stalnacke B ^c   Landgren, G ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001274506     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589387     Document Type: Article

References (22)

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