Common-emitter current-voltage characteristics of a Pnp AlGaN/GaN heterojunction bipolar transistor with a low-resistance base layer

Applied Physics Letters

Volumn 80, Issue 20, 2002, Pages 3841-3843

  Kumakura, Kazuhide ^a   Makimoto, Toshiki ^a   Kobayashi, Naoki ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; BASE LAYERS; BASE RESISTANCE; COLLECTOR CURRENTS; COMMON EMITTER; COMMON-EMITTER CURRENT GAIN; DEVICE STRUCTURES; EMITTER LAYERS; LOW RESISTANCE; MOLE FRACTION; ORDERS OF MAGNITUDE; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SI-DOPING;

GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; SAPPHIRE; TRANSISTORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79955990795     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1480102     Document Type: Article

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