Common-emitter current-voltage characteristics of a pnp GaN bipolar junction transistor

Applied Physics Letters

Volumn 80, Issue 7, 2002, Pages 1225-1227

  Kumakura, Kazuhide ^a   Makimoto, Toshiki ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR JUNCTION TRANSISTOR; COLLECTOR CURRENTS; COMMON EMITTER; COMMON-EMITTER CURRENT GAIN; DEVICE STRUCTURES; DOPING CONCENTRATION; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES;

GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; SAPPHIRE; TRANSISTORS; TUNNEL DIODES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79956023983     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1447593     Document Type: Article

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