Optical properties of (AlxGa1-x)0.52In0.48P at the crossover from a direct-gap to an indirect-gap semiconductor

Journal of Applied Physics

Volumn 83, Issue 4, 1998, Pages 2241-2249

  Dorr U ^a   Schwarz, W ^a   Worner A ^a   Westphaling R ^a   Dinger, A ^a   Kalt, H ^a   Mowbray, D J ^b   Hopkinson, M ^b   Langbein, W ^c  

^a UNIVERSITY OF KARLSRUHE   (Germany)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c TECHNICAL UNIVERSITY OF DENMARK   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

DYNAMICS; ELECTRON EMISSION; EXCITONS; FILM GROWTH; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PHOTONS; PLASMAS;

DIRECT TO INDIRECT BAND GAP CROSSOVER; STIMULATED EMISSION;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0038233149     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.366963     Document Type: Article

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