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Volumn 211, Issue 2, 1999, Pages 869-883

Energy level alignments in strained-layer GaInP/AlGaInP laser diodes: Model solid theory analysis of pressure-photoluminescence experiments

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EID: 0033483630     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199902)211:2<869::AID-PSSB869>3.0.CO;2-N     Document Type: Article
Times cited : (8)

References (33)
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    • J. TERSOFF, Phys. Rev. Lett. 52, 465 (1984); Phys. Rev. B 30, 4874 (1984); J. Vac. Sci. Technol. B 3, 1157 (1985); Phys. Rev. B 32, 6968 (1985); Phys. Rev. Lett. 56, 2755 (1986).
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    • J. TERSOFF, Phys. Rev. Lett. 52, 465 (1984); Phys. Rev. B 30, 4874 (1984); J. Vac. Sci. Technol. B 3, 1157 (1985); Phys. Rev. B 32, 6968 (1985); Phys. Rev. Lett. 56, 2755 (1986).
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    • J. TERSOFF, Phys. Rev. Lett. 52, 465 (1984); Phys. Rev. B 30, 4874 (1984); J. Vac. Sci. Technol. B 3, 1157 (1985); Phys. Rev. B 32, 6968 (1985); Phys. Rev. Lett. 56, 2755 (1986).
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    • J. TERSOFF, Phys. Rev. Lett. 52, 465 (1984); Phys. Rev. B 30, 4874 (1984); J. Vac. Sci. Technol. B 3, 1157 (1985); Phys. Rev. B 32, 6968 (1985); Phys. Rev. Lett. 56, 2755 (1986).
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