Band alignments in InxGa1-xP/GaAs heterostructures investigated by pressure experiments

Physica Status Solidi (A) Applied Research

Volumn 178, Issue 1, 2000, Pages 571-576

  Martinez Pastor J ^a,c   Camacho, J ^a   Rudamas, C ^a   Cantarero, A ^a   Gonzalez L ^b   Syassen, K ^c  

^a UNIVERSITY OF VALENCIA   (Spain)

^b INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; EXCITONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES;

ATOMIC LAYER MOLECULAR BEAM EPITAXY (ALMBE);

HETEROJUNCTIONS;

EID: 0342521609     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200003)178:1<571::AID-PSSA571>3.0.CO;2-M     Document Type: Article

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