Cathodoluminescence study of the excitons localization in AlGaN/GaN and InGaN/GaN quantum wells grown on sapphire

Journal of Crystal Growth

Volumn 247, Issue 3-4, 2003, Pages 284-290

  Bubendorff, J L ^a   Grandjean, N ^b   Damilano, B ^b   Troyon, Michel ^a  

^a UNIVERSITÉ DE REIMS CHAMPAGNE ARDENNE   (France)

^b CNRS   (France)

Author keywords

A1. Cathodoluminescence; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Gallium compounds; B2. Semiconducting III V materials

Indexed keywords

CATHODOLUMINESCENCE; EXCITONS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

SCANNING FORCE MICROSCOPY (SFM);

MOLECULAR BEAM EPITAXY;

EID: 0037212934     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)01994-2     Document Type: Article

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