Boron penetration effect on gate oxide reliability of 50 Å PMOS devices

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 637-640

  Kyono, Carl ^a   Broz̈ek, Tomasz ^a   Ilderem, Vida ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; DEGRADATION; GATES (TRANSISTOR); ION IMPLANTATION; LEAKAGE CURRENTS; SEMICONDUCTING BORON; SEMICONDUCTOR DOPING; THRESHOLD VOLTAGE;

STRESS-INDUCED LEAKAGE CURRENTS;

MOSFET DEVICES;

EID: 0033731354     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00266-8     Document Type: Article

References (6)

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4. Hao M, et al. IEEE EDL 1997;18(5):215.
5. Jahan C, Barla K. J Non-Cryst Solids 1998;245:33.
6. Houtsma VE, et al. IEEE Electron Dev Lett 1999;20(7):314.