Impact of metal-oxide gate dielectric on minority carrier lifetime in silicon

Applied Physics Letters

Volumn 80, Issue 20, 2002, Pages 3850-3852

  Hegde, Rama I ^a   Hobbs, Christopher C ^a   Dip, Lurae ^a   Schaeffer, Jamie ^a   Tobin, Philip J ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH TEMPERATURE; LIFETIME MEASUREMENTS; METAL TRACERS; METAL-OXIDE; MINORITY CARRIER LIFETIMES; MOCVD METHODS;

DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM OXIDES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHYSICAL VAPOR DEPOSITION; SILICATES; SILICON; SILICON OXIDES; SILICON WAFERS; ZIRCONIUM; ZIRCONIUM ALLOYS;

CARRIER LIFETIME;

EID: 79955984264     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1480883     Document Type: Article

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