Positron annihilation in SiO 2 -Si studied by a pulsed slow positron beam

Applied Surface Science

Volumn 194, Issue 1-4, 2002, Pages 89-96

  Suzuki, R ^a   Ohdaira, T ^a   Uedono, A ^b   Kobayashi, Y ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Interface; MOS; Porous silica film; Positronium; Pulsed positron beam; SiO 2

Indexed keywords

FILM GROWTH; INTERFACES (MATERIALS); MOS DEVICES; PARTICLE DETECTORS; POSITRON ANNIHILATION SPECTROSCOPY; SCINTILLATION; SEMICONDUCTING FILMS; SILICA; SPUTTERING;

AGE-MOMENTUM CORRELATION (AMOC) SPECTROSCOPY; POSITRON ANNIHILATIONS;

POSITRONS;

EID: 0037150947     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00094-6     Document Type: Conference Paper

References (25)