Native and irradiation-induced defects in SiO2 structures studied by positron annihilation techniques

Materials Science Forum

Volumn 363-365, Issue , 2001, Pages 64-66

  Rivera, A ^a   Montilla, I ^a   Alba Garcia A ^a   Galindo, R E ^a   Falub, C V ^a   Van Veen, A ^a   Schut, H ^a   De Nijs, J M M ^a   Balk, P ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

2D ACAR; Deuterium implantation; Doppler broadening; Positron lifetime; Positronium; SIMOX; SOI

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; DECOMPOSITION; DOPPLER EFFECT; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; ION IMPLANTATION; IRRADIATION; POINT DEFECTS; POSITRON ANNIHILATION SPECTROSCOPY; THIN FILMS;

IRRADIATION INDUCED DEFECTS; NATIVE DEFECTS; POSITRONIUM;

SILICA;

EID: 0035007918     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (14)