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Volumn 516, Issue 3, 2002, Pages
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Formation of atomically flat Si(0 0 1) surface with incorporated carbon
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Author keywords
Alkynes; Carbon; Scanning tunneling microscopy; Silicon; Surface relaxation and reconstruction
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Indexed keywords
CARBON;
CRYSTAL ORIENTATION;
DISSOCIATION;
MOLECULAR BEAM EPITAXY;
MONOLAYERS;
RELAXATION PROCESSES;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING SILICON;
THIN FILMS;
THERMAL DISSOCIATION;
SURFACE PHENOMENA;
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EID: 0037144343
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(02)02056-3 Document Type: Article |
Times cited : (7)
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References (31)
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