|
|
Volumn 512, Issue 1-2, 2002, Pages
|
|
Influence of strain on binding energies of Si atoms at Ge(1 1 1) surfaces
|
|
Author keywords
Bismuth; Epitaxy; Germanium; Scanning tunneling microscopy; Semiconductor semiconductor thin film structures; Silicon; Surface diffusion; Surface stress
|
|
Indexed keywords
BINDING ENERGY;
COMPRESSIVE STRESS;
DIFFUSION;
EPITAXIAL GROWTH;
MASS TRANSFER;
MONOLAYERS;
SCANNING TUNNELING MICROSCOPY;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON;
STRAIN;
SURFACE ACTIVE AGENTS;
SURFACE REACTIONS;
SURFACE STRUCTURE;
TENSILE STRESS;
THIN FILMS;
STRAIN MODULATED SURFACES;
SURFACE STRESSES;
INTERFACIAL ENERGY;
|
|
EID: 0037142405
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(02)01684-9 Document Type: Article |
|
Times cited : (3)
|
|
References (17)
|
