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Physica Status Solidi (A) Applied Research

Volumn 171, Issue 1, 1999, Pages 203-207

Influence of dislocations on nitrogen-oxygen complex in silicon

(2) Yang, Deren a Que, Duanlin a

a ZHEJIANG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPLEXATION; CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); NITROGEN; OXYGEN; REACTION KINETICS; SEMICONDUCTOR DOPING;

NITROGEN-DOPED CZOCHRALSKI (NCZ) SILICON;

SEMICONDUCTING SILICON;

EID: 0032734755 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/(SICI)1521-396X(199901)171:1<203::AID-PSSA203>3.0.CO;2-L Document Type: Article

Times cited : (2)

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