Epitaxy and strain in the growth of GaN on AIN: A polarized x-ray absorption spectroscopy study

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 20, 2002, Pages 2054111-2054117

  D'Acapito, F ^a   Boscherini, F ^b   Mobilio, S ^c,f   Rizzi, A ^d,e   Lantier, R ^e  

^a EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c ROMA TRE UNIVERSITY   (Italy)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^e FORSCHUNGSZENTRUM JÜLICH   (Germany)

^f INFN LABORATORI NAZIONALI DI FRASCATI   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRATE; GALLIUM NITRATE;

ABSORPTION SPECTROSCOPY; ARTICLE; MOLECULAR DYNAMICS; NUCLEAR PHYSICS; POLARIZATION; THERMOREGULATION;

EID: 0037113631     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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37. 3V in this case) instead of that of the crystal is used nothing changes in this argument.