Direct evidence of spontaneous polarization effect in GaN grown on SiC(0001): Heterojunction electronic properties

Physica Status Solidi (A) Applied Research

Volumn 176, Issue 1, 1999, Pages 615-619

  Lantier, R ^a   Boscherini, F ^b   Rizzi, A ^a,c   D'Acapito, F ^d   Mobilio, S ^e   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b INFN LABORATORI NAZIONALI DI FRASCATI   (Italy)

^c UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^d EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

^e ROMA TRE UNIVERSITY   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CRYSTAL ORIENTATION; HETEROJUNCTION BIPOLAR TRANSISTORS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; POLARIZATION; SEMICONDUCTOR GROWTH; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

SPONTANEOUS POLARIZATION EFFECTS; VALENCE BAND OFFSET (VBO);

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033221679     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<615::AID-PSSA615>3.0.CO;2-M     Document Type: Article

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