Interface-related in-plane optical anisotropy in GaAs/AlxGa1-xAs single-quantum-well structures studied by reflectance difference spectroscopy

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 19, 2002, Pages 1953211-1953215

  Chen, Y H ^a   Ye, X L ^a   Wang, J Z ^a   Wang, Z G ^a   Yang, Z ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ARSENIC; GALLIUM;

ANISOTROPY; ARTICLE; CHEMICAL BOND; CHEMICAL STRUCTURE; MATHEMATICAL ANALYSIS; MEASUREMENT; OPTICS; POLARIZATION; QUANTUM MECHANICS; REFLECTOMETRY;

EID: 0037113583     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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