Determination of the values of hole-mixing coefficients due to interface and electric field in GaAs/AlxGa1−xAs superlattices

Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 11, 2001, Pages

  Ye, Xiao Ling ^a   Chen, Y ^a   Wang, J Z ^a   Wang, G Z ^a   Yang, Z ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ARSENIC; GALLIUM;

ANISOTROPY; ARTICLE; CALCULATION; CHEMICAL ANALYSIS; ELECTRIC FIELD; MATHEMATICAL ANALYSIS; OPTICAL ROTATION; PHYSICS; REFLECTOMETRY; SEMICONDUCTOR;

EID: 0012568741     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.63.115317     Document Type: Article

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