Anisotropic interfacial strain in InP/InGaAs/InP quantum wells studied using degree of polarization of photoluminescence

Journal of Applied Physics

Volumn 81, Issue 8, 1997, Pages 3616-3620

  Lakshmi, B ^a   Robinson, B J ^a   Cassidy, Daniel T ^a   Thompson, D A ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000938628     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365479     Document Type: Article

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