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Physical Review B - Condensed Matter and Materials Physics

Volumn 61, Issue 15, 2000, Pages 10322-10329

Exciton localization and interface roughness in growth-interrupted GaAs/AlAs quantum wells

(4) Leosson, K a Jensen, J a Langbein, W a Hvam, J a

a TECHNICAL UNIVERSITY OF DENMARK (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001099612 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.61.10322 Document Type: Article

Times cited : (90)

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