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Journal of Applied Physics

Volumn 92, Issue 10, 2002, Pages 6291-6295

Investigation of grain formation and growth in nickel-induced lateral crystallization process

(4) Yuen, C Y a Poon, M C a Chan, W Y a Qin, M b

a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (Hong Kong)

b Southeast University (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON FILM; ATOMIC FORCE MICROSCOPE (AFM); CRYSTALLIZATION PROCESS; GRAIN FORMATION; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; N-CHANNEL; NICKEL SILICIDE; NICKEL SOURCE; OPTICAL MICROSCOPES; RELATIVE POSITIONS; SIMPLE METHOD; STRUCTURAL CONDITION; TRIANGULAR SHAPES;

ATOMIC FORCE MICROSCOPY; NICKEL; SILICIDES;

GRAIN GROWTH;

EID: 0037113115 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1513881 Document Type: Article

Times cited : (17)

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